安森美发布第四代碳化硅平台EliteSiC M4：功率密度最高提升30%、损耗降低35%，750伏汽车牵引裸芯片即日供货
安森美11月10日在亚利桑那州斯科茨代尔发布第四代碳化硅平台EliteSiC M4。该平台采用沟槽架构，公司称其功率密度较上一代最高提升30%，损耗降低35%。
碳化硅是用于高压功率转换的宽禁带半导体材料。安森美表示，人工智能、电动化与能源基础设施的增长给功率系统设计带来共同挑战，即在不按比例增加体积、能量损耗与散热需求的前提下交付明显更多的功率，EliteSiC M4即针对这一约束设计。
具体指标方面，平台的比导通电阻改善幅度为20%至50%，同时支持更快的开关速度。在开关损耗上，硬开关条件下的开关品质因数改善67%，软开关条件下改善50%，有助于紧凑型电源设计。
耐用性方面，平台面向严苛运行环境设计，认证支持185摄氏度及以上的温度，可用于高压汽车与航天等应用。封装方面，平台支持现有封装形式，包括顶面散热的表面贴装封装与高功率模块。
安森美称，其碳化硅技术在全球车辆中的真实运行里程已超过160亿英里。
安森美功率解决方案集团总裁Achyut Shah在发布中表示，功率需求的增长速度快于其周边物理基础设施，下一代功率系统需要在更小的空间内更高效地交付更多功率，EliteSiC M4把已验证的可靠性基础同客户所需的性能结合起来。
舍弗勒汽车电机控制业务副总裁Harald Hartel在发布中表示，随着车辆功率等级上升，牵引逆变器设计在效率、热性能、功率密度与可靠性之间的平衡更为紧凑，更高的效率与功率密度有助于优化牵引逆变器的续航、热性能与封装。
应用场景上，公司把平台指向三类市场。人工智能数据中心可用更高密度的功率转换从每兆瓦电力中获得更多算力。电动汽车可用更紧凑高效的牵引逆变器改善续航。能源基础设施可用更高效的功率转换减少太阳能、储能及其它高压系统的转换损耗。
供货方面，EliteSiC M4的750伏汽车牵引逆变器裸芯片即日起供货。电压最高至1200伏的其它产品预计自2027年起陆续供货。
安森美在纳斯达克上市，股票代码ON，为标普500指数成分股，主营智能功率与感知技术。
onsemi Launches Fourth Generation EliteSiC M4 Silicon Carbide Platform with up to 30% Higher Power Density and 35% Lower Losses
onsemi on November 10 in Scottsdale, Arizona introduced EliteSiC M4, its fourth generation silicon carbide platform built on a trench architecture. The company said the platform delivers up to 30 percent higher power density and 35 percent lower losses compared with the previous generation.
Silicon carbide is a wide bandgap semiconductor material used in high voltage power conversion. onsemi said the growth of AI, electrification and energy infrastructure is creating a common challenge for power system designers, delivering significantly more power without proportional increases in size, energy losses and cooling requirements, and that EliteSiC M4 addresses that challenge within existing system constraints.
On specific metrics, the platform reduces specific on resistance by between 20 percent and 50 percent, while enabling faster switching. Switching figures of merit improve by 67 percent in hard switching and 50 percent in soft switching, supporting compact power supply designs.
On ruggedness, the platform is designed for demanding operating environments, with qualification supporting temperatures of 185 degrees Celsius and above, enabling use in high voltage automotive and space applications. On packaging, it is designed to support existing packages, including top side cooled surface mount packages and high power modules.
onsemi said its silicon carbide technology builds on more than 16 billion miles of real world operation in vehicles around the world.
Achyut Shah, Group President of the Power Solutions Group at onsemi, said in the release that power requirements are rising faster than the physical infrastructure around them, and that EliteSiC M4 combines a foundation of proven reliability with the performance customers need to rethink the balance among power, efficiency, size and cost.
Harald Hartel, Vice President for BU eMotor Controls at Schaeffler AG, said in the release that as vehicle power levels increase, traction inverter design becomes a tighter balancing act between efficiency, thermal performance, power density and reliability, and that higher efficiency and power density can give greater flexibility to optimize the traction inverter for range, thermal performance and packaging.
On applications, the company pointed to three markets. For AI data centers, higher density power conversion helps operators get more compute from every megawatt. For electric vehicles, more compact and efficient traction inverters can help automakers improve vehicle range. For energy infrastructure, more efficient and higher density conversion helps solar, energy storage and other high voltage systems reduce conversion losses.
On availability, the EliteSiC M4 750 volt bare die for automotive traction inverters is available now. Additional product offerings for a range of voltages up to 1200 volts are expected to be available beginning in 2027.
onsemi trades on Nasdaq under the ticker ON and is a member of the S and P 500 index. It delivers intelligent power and sensing technologies across automotive, industrial and AI data center end markets.
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来源：GlobeNewswire
发布：GSM·美国（发布链接）
图片来源：Wikipedia/Wikimedia Commons 词条主图：Chevrolet C/K (fourth generation)
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