香港大学团队制成兆瓦级超宽禁带半导体模块：氧化镓器件在 1000 伏与 1000 安下重复开关，峰值功率达 1 兆瓦
香港消息，香港大学工程学院电机电子工程系与先进半导体及集成电路中心的研究团队宣布，已制成一款可处理兆瓦级功率转换的超宽禁带半导体氧化镓（Ga2O3）功率模块。研究成果已发表于《自然·通讯》。
该团队由张宇昊教授、何和巩博士与博士生杨鑫带领，并与弗吉尼亚理工大学陆国全教授、南京大学叶建东教授合作。团队演示的多芯片氧化镓模块可在 1000 伏电压与 1000 安电流下重复开关，峰值功率达到 1 兆瓦。
据论文与校方转述，与此前已演示的超宽禁带半导体技术相比，这一功率能力提高了两个数量级以上。单个封装器件在脉冲工作下可在 1000 伏下导通 234 安，结温超过 250 摄氏度时仍可工作。
团队随后把 6 个器件集成为更大的模块。模块以 1 千赫频率在 1000 伏与 1000 安下实现重复开关，对应峰值功率为 1 兆瓦。
研究团队表示，氧化镓导热能力较弱、多器件高压大电流封装难度高，是其功率长期受限的主要原因。本次工作采用器件与封装协同设计，并提出结侧冷却结构，把发热区域贴近冷却路径。
团队同时引入高介电常数绝缘层，帮助重新分布器件周围的电场。张宇昊表示，这一设计使团队得以同时管理电场、热流与机械应力，而不是把器件与封装分开处理。
巩博士表示，这是超宽禁带多芯片模块首次达到兆瓦功率水平。团队称，该路线为把超宽禁带材料的性能转化为实用的大功率系统提供了可扩展的方法。
论文列出的潜在应用包括未来电网的高压保护、先进医疗系统、粒子加速器与聚变能源设施。团队此前的器件与封装协同设计研究曾入选 2025 年 IEEE 国际电子器件会议技术亮点。
来源链接：TechXplore 研究报道（2026-11-09，含《自然·通讯》论文信息，DOI 10.1038/s41467-026-71274-6）： https://techxplore.com/news/2026-11-world-megawatt-ultra-wide-bandgap.html
University of Hong Kong Team Builds Megawatt Ultra-Wide Bandgap Semiconductor Module: Gallium Oxide Devices Switch Repeatedly at 1,000 Volts and 1,000 Amperes for 1 Megawatt Peak Power
Hong Kong — Researchers from the Department of Electrical and Computer Engineering in the Faculty of Engineering at the University of Hong Kong and the Center for Advanced Semiconductors and Integrated Circuits have developed an ultra-wide bandgap gallium oxide (Ga2O3) power module capable of handling megawatt-level power conversion. The study was published in Nature Communications.
The team was led by Professor Yuhao Zhang, Dr. Hehe Gong and Ph.D. student Xin Yang, in collaboration with Professor Guo-Quan Lu of Virginia Tech and Professor Jiandong Ye of Nanjing University. The team demonstrated a multi-chip Ga2O3 power module capable of repeatedly switching 1,000 volts and 1,000 amperes.
According to the paper, the result represents more than a two-order-of-magnitude increase in the power capability previously demonstrated using ultra-wide bandgap semiconductor technologies. A single packaged Ga2O3 device conducted 234 amperes at 1,000 volts during pulsed operation, while remaining functional at junction temperatures exceeding 250 degrees Celsius.
The team then integrated six devices into a larger module. The module demonstrated repetitive switching at 1,000 volts and 1,000 amperes at a frequency of 1 kilohertz, corresponding to a peak power level of one megawatt.
The researchers said gallium oxide does not conduct heat efficiently and that packaging multiple devices together becomes increasingly difficult at high voltage and current, which has historically limited practical devices to relatively low power. The work used a device-package co-design approach and a junction-side cooling architecture that places the heat-generating region of the semiconductor close to the cooling path.
The team also introduced a high-permittivity insulating layer that helps redistribute the electric field around the device. Zhang said the co-design allowed the team to simultaneously manage the electrical field, heat flow and mechanical stress.
Gong said this is the first time an ultra-wide bandgap multi-chip module has reached the megawatt power level. The team said the result provides a scalable approach for translating the material properties of ultra-wide bandgap semiconductors into practical high-power systems.
Potential applications listed in the report include high-voltage protection for future power grids, advanced medical systems, particle accelerators and fusion-energy facilities. The team's previous research in this area was selected as a Technical Highlight at the 2025 IEEE International Electron Devices Meeting.
Source: TechXplore research report, November 9, 2026, with Nature Communications paper details, DOI 10.1038/s41467-026-71274-6: https://techxplore.com/news/2026-11-world-megawatt-ultra-wide-bandgap.html
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图片来源：Wikipedia/Wikimedia Commons 词条主图：Handover of Hong Kong
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